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| FDS4501H May 2001 FDS4501H Complementary PowerTrench(R) Half-Bridge MOSFET General Description This complementary MOSFET half-bridge device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features * Q1: N-Channel 9.3A, 30V RDS(on) = 18 m @ V GS = 10V RDS(on) = 23 m @ V GS = 4.5V * Q2: P-Channel -5.6A, -20V RDS(on) = 46 m @ V GS = -4.5V RDS(on) = 63 m @ V GS = -2.5V Applications * DC/DC converter * Power management * Load switch * Battery protection D D D D D D DD Q2 5 6 Q1 4 3 2 1 SO-8 SO-8 S S S G 7 8 2 G S2 TA = 25C unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Parameter - Continuous - Pulsed Power Dissipation for Single Operation G S1 1 Q1 30 (Note 1a) Q2 -20 8 -5.6 -20 2.5 1.2 1 -55 to +150 Units V V A W Drain Current 20 9.3 20 (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS4501H Device FDS4501H Reel Size 13" Tape width 12mm Quantity 2500 units (c)2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W) FDS4501H Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions V GS = 0 V, ID = 250 A V GS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C V DS = 24 V, V GS = 0 V V DS = -16 V, V GS = 0 V V GS = +20 V, V DS = 0 V V GS = +8 V, V DS = 0 V V DS = V GS , ID = 250 A V DS = V GS , ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C V GS = 10 V, ID = 9.3 A V GS = 10 V, ID = 9.3 A, TJ = 125C V GS = 4.5 V, ID = 7.6 A V GS = -4.5 V, ID = -5.6 A V GS = -4.5 V, ID = -5.6 A, TJ = 125C V GS = -2.5 V, ID = -5.0 A V GS = 10 V, V DS = 5 V V GS = -4.5 V, V DS = -5 V V DS = 5 V, ID = 9.3 A V DS = 5 V, ID = -5.6 A V DS = 10 V, V GS = 0 V, f = 1.0 MHz Type Min Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 -20 Typ Max Units V 24 -13 1 -1 +100 +100 mV/C A nA Off Characteristics On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 1 -0.4 Q2 1.6 -0.7 -4 3 14 21 17 36 49 47 3 -1.5 V mV/C 18 29 23 46 80 63 m ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 -20 28 16 1958 1312 424 240 182 106 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance pF pF pF FDS4501H Rev C(W) Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 V DD = 15 V, ID = 1 A, V GS = 10V, RGEN = 6 Q1 V DD = -10 V, ID = -1 A, V GS = -4.5V, RGEN = 6 Q1 V DS = 15 V, ID = 9.3 A, V GS = 4.5 V Q2 V DS = 15 V, ID = -2.4 A,V GS = -4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 15 15 5 15 38 40 10 25 17 13 4 2.5 5 2.0 27 27 10 27 61 64 20 40 27 21 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 2.1 A (Note 2) Voltage V GS = 0 V, IS = -2.1 A (Note 2) Q1 Q2 Q1 Q2 2.1 -2.1 1.2 -1.2 A V a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b) 105C/W when mounted on a 0.04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4501H Rev C(W) FDS4501H Typical Characteristics: Q2 15 V GS = -4.5V -3.0V 12 -2.5V -2.0V 4 3.5 V GS = -1.5V 3 9 -1.8V 6 2.5 2 1.5 -1.8V -2.0V -2.5V -3.0V -4.5V 3 -1.5V 1 0.5 0 0 0.5 1 1.5 2 2.5 0 3 6 9 12 15 -V DS , DRAIN-SOURCE VOLTAGE (V) -ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.5 1.4 1.3 1.2 1.1 1 ID = -2.4A V GS = -4.5V ID = -1.2 A 0.12 0.1 0.08 T A = 125o C 0.06 TA = 25oC 0.04 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 0.02 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 15 V DS = - 5V 12 -55o C 9 TA = 125 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 25o C 10 1 0.1 T A = 125o C 25o C -55 oC 6 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 3 0 0.8 1 1.2 1.4 -V GS, GATE TO SOURCE VOLTAGE (V) -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4501H Rev C(W) FDS4501H Typical Characteristics: Q2 5 ID = -2.4A 4 -15V 3 V DS = -5V -10V 2000 f = 1MHz V GS = 0 V CISS 1600 1200 2 800 1 400 COSS CRSS 0 5 10 15 20 0 0 2 4 6 8 10 12 14 0 Q g, GATE CHARGE (nC) -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10 10ms 1 DC 0.1 VGS =-4.5V SINGLE PULSE R JA = 125 oC/W T A = 25o C 0.01 0.1 1 10 100 0 5 100ms 1s 10s 10 1ms 15 20 Figure 8. Capacitance Characteristics. SINGLE PULSE R JA = 125C/W T A = 25C 0.01 0.1 1 10 100 1000 -V DS , DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS4501H Rev C(W) FDS4501H Typical Characteristics: Q1 21 V GS = 10.0V 18 15 12 9 6 3 0 0 0.5 1 1.5 2 6.0V 4.5V 3.5V 3.0V 4 3.5 V GS = 2.5V 3 2.5 2 2.5V 1.5 1 0.5 0 5 10 15 20 25 ID, DIRAIN CURRENT (A) 3.0V 3.5V 4.5V 6.0V 10V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 ID = 4.7A 0.06 1.6 ID = 9.3A V GS = 10V 1.4 1.2 0.04 1 0.02 0.8 TA = 25 oC 0 -50 -25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5 T A = 125o C 0.6 T J, JUNCTION TEMPERATURE (oC) V GS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 25 V DS = 5.0V 20 T A = -55oC 25o C Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 125oC 1 TA = 125o C 25o C -55 o C 15 0.1 10 0.01 5 0.001 0.0001 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 0 V GS, GATE TO SOURCE VOLTAGE (V) V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4501H Rev C(W) FDS4501H Typical Characteristics Q1 10 ID = 9.3A 8 V DS = 5V 15V 10 3000 f = 1 MHz V GS = 0 V CISS 2000 2500 6 1500 4 1000 2 500 0 0 5 10 15 20 25 30 CRSS 0 0 5 10 15 20 Q g, GATE CHARGE (nC) COSS V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 100s 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 1 V GS = 10V SINGLE PULSE R JA = 125 C/W T A = 25o C 0.01 0.01 0.1 1 10 100 o Figure 18. Capacitance Characteristics. 30 P(pk), PEAK TRANSIENT POWER (W) 25 SINGLE PULSE RJ A = 125C/W TA = 25C 20 15 10 10s DC 0.1 5 0 0.01 0.1 1 t1 , TIME (sec) 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 R JA(t) = r(t) + R JA 0.1 0.05 0.1 RJA = 125 C/W P(pk) 0.02 o 0.01 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 t1, TIME (sec) 1 10 100 1000 0.001 0.0001 0.001 0.01 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4501H Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2 |
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